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| Amplifier, Power, 8W 2.0-8.0 GHz Features MAAPGM0074-DIE Rev A Preliminary Datasheet 8 Watt Saturated Output Power Level 2-Octave Bandwidth Variable Drain Voltage (4-10V) Operation MSAGTM Process Description The MAAPGM0074-DIE is a 2-stage 8W power amplifier with on-chip bias networks. This product is fully matched to 50 ohms on both the input and output. It can be used as a power amplifier stage or as a driver stage in high power applications. Fabricated using M/A-COM's repeatable, high performance and highly reliable GaAs Multifunction Self-Aligned Gate (MSAGTM)Process, each device is 100% RF tested on wafer to ensure performance compliance. M/A-COM's MSAGTM process features robust silicon-like manufacturing processes, planar processing of ion implanted transistors, multiple implant capability enabling power, low-noise, switch and digital FETs on a single chip, and polyimide scratch protection for ease of use with automated manufacturing processes. The use of refractory metals and the absence of platinum in the gate metal formulation prevents hydrogen poisoning when employed in hermetic packaging. Primary Applications SatCom Radio Communications Radar Electronic Warfare Also Available in: Description Part Number Ceramic Package MAAP-000074-PKG001 Sample Board (Die) MAAP-000074-SMB004 Sample Board (Pkg) MAAP-000074-SMB001 Mechanical Sample (Die) MAAP-000074-MCH000 Electrical Characteristics: T B = 30C1, Z0 = 50 , VDD = 10V, IDQ = 2.1A2, Pin = 28 dBm, RG=40 Parameter Bandwidth Output Power 1-dB Compression Point Small Signal Gain Input VSWR Output VSWR Gate Current Drain Current 2nd Harmonic, 2-4 GHz 2nd Harmonic, 6-8 GHz 1. 2. 1 Symbol f POUT P1dB G VSWR VSWR IGG IDD 2f 2f Typical 2.0-8.0 39 38 14 1.7:1 2.2:1 3.5 3.5 16.5 72 mA A dBc dBc Units GHz dBm dBm dB TB = MMIC Base Temperature Adjust VGG between -2.6 and -1.5V to achieve specified IDQ . M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. M/A-COM makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does M/A-COM assume any liability whatsoever arising out of the use or application of any product(s) or information. * North America Tel: 800.366.2266 / Fax: 978.366.2266 * Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 * Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 Visit www.macom.com for additional data sheets and product information. Amplifier, Power, 8W 2.0-8.0 GHz Maximum Ratings 3 Parameter Input Power Drain Supply Voltage Gate Supply Voltage Quiescent Drain Current (No RF) Quiescent DC Power Dissipated (No RF) Junction Temperature Storage Temperature Symbol PIN VDD VGG IDQ PDISS TJ TSTG Absolute Maximum 33 +12.0 -3.0 3.4 23.4 170 -55 to +150 MAAPGM0074-DIE Rev A Preliminary Datasheet Units dBm V V A W C C 3. Operation beyond these limits may result in permanent damage to the part. Recommended Operating Conditions4 Characteristic Drain Voltage Gate Voltage Input Power Thermal Resistance MMIC Base Temperature Symbol VDD VGG PIN JC TB Min 4.0 -2.6 Typ 10 -2.2 28 4.3 Note 5 Max 10 -1.5 30 Unit V V dBm C/W C 4. Operation outside of these ranges may reduce product reliability. 5. MMIC Base Temperature = 170C -- JC* VDD * I DQ Power Derating Curve, Quiescent (No RF) 30 This device is static sensitive. Please handle with care. To operate the device, follow these steps. 1. Apply VGG = -2.7 V, VDD= 0 V. 2. Ramp VDD to desired voltage, typically 10.0 V. 3. Adjust VGG to set IDQ, (approximately @ -2.2 V). 4. Set RF input. Peak Power Dissipation [Watts] Operating Instructions 25 20 15 10 5 5. Power down sequence in reverse. Turn VGG off last. 0 -40 -20 0 20 40 60 80 100 120 140 160 180 Maximum Allowable Base Temperature [C] 2 M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. M/A-COM makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does M/A-COM assume any liability whatsoever arising out of the use or application of any product(s) or information. * North America Tel: 800.366.2266 / Fax: 978.366.2266 * Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 * Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 Visit www.macom.com for additional data sheets and product information. Amplifier, Power, 8W 2.0-8.0 GHz 45 43 41 39 50 45 40 35 45 43 41 39 MAAPGM0074-DIE Rev A Preliminary Datasheet All Data is at 30C MMIC base temperature, CW stimulus, unless otherwise noted. 35 33 31 29 27 25 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0 Pout PAE 25 20 15 10 5 0 P 1dB (dBm) P out (dBm) PAE (%) 37 30 37 35 33 31 29 27 25 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0 6V 8V 10V Frequency (GHz) Figure 1. Output Power and Power Added Efficiency vs. Frequency at VD=10V, P in=28dBm, and 25% IDSS 45 43 41 39 45 43 41 39 Frequency (GHz) Figure 2. 1dB Compression Point vs. Frequency by Drain Voltage at 25% IDSS Psat (dBm) Psat (dBm) 37 35 33 31 29 27 25 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0 6V 8V 10V 37 35 33 31 29 27 25 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0 -20C 33C 93C Frequency (GHz) Figure 3. Saturated Output Power vs. Frequency by Drain Voltage at 25% IDSS Frequency (GHz) Figure 4. Saturated Output Power vs. Frequency by Temperature at 10V and 25% IDSS 20 18 6 42.00 40.00 22.00 20.00 18.00 16.00 14.00 Pout PAE SSG IDS 12.00 10.00 8.00 6.00 4.00 2.00 150 Output Power (dBm), PAE (%) 14 36.00 34.00 32.00 30.00 28.00 26.00 24.00 Gain (dB) 12 10 8 6 4 2 0 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0 10V Input VSW R OutputVSWR 4 3 2 1 22.00 30 40 50 60 70 80 90 100 110 120 130 140 Frequency (GHz) Figure 5. Small Signal Gain and Input and Output VSWR vs. Frequency by Drain Voltage at 25% IDSS Junction Temperature (C) Figure 6. Output Power, Small Signal Gain, Power Added Efficiency, and Drain Current vs. Junction Temperature at 10 V, 5.5 GHz, and 25% IDSS 3 M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. M/A-COM makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does M/A-COM assume any liability whatsoever arising out of the use or application of any product(s) or information. * North America Tel: 800.366.2266 / Fax: 978.366.2266 * Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 * Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 Visit www.macom.com for additional data sheets and product information. SSG (dB), Drain Current (A) 16 5 38.00 VSWR Amplifier, Power, 8W 2.0-8.0 GHz 45 43 41 39 37 18.0 16.0 14.0 35 20.0 MAAPGM0074-DIE Rev A Preliminary Datasheet All Data is at 30C MMIC base temperature, CW stimulus, unless otherwise noted. Output Power (dBm) 31 29 27 25 23 21 19 17 15 6 8 10 12 14 16 18 20 22 24 26 28 30 2 GHz 3 GHz 4 GHz 5 GHz 6 GHz 7 GHz 8 GHz Gain (dB) 33 12.0 10.0 8.0 6.0 4.0 2.0 0.0 15 17 19 21 23 25 27 29 31 33 35 37 39 41 43 3 GHz 5.5 GHz 8 GHz Input Power (dBm) Figure 7. Output Power vs. Input Power by Frequency at 10V and 25% IDSS Output Power (dBm) Figure 8. Gain vs. Output Power by Frequency at 10V and 25% IDSS 30 28 26 24 22 20 2 GHz 3 GHz 4 GHz 5 GHz 6 GHz 7 GHz 8 GHz 5.0 4.5 4.0 3.5 Drain Current (A) PAE (%) 18 16 14 12 10 8 6 4 2 0 6 8 3.0 2.5 2.0 1.5 1.0 0.5 0.0 6 8 10 12 14 16 18 20 22 24 26 28 30 2 GHz 3 GHz 4 GHz 5 GHz 6 GHz 7 GHz 8 GHz 10 12 14 16 18 20 22 24 26 28 30 Input Power (dBm) Figure 9. Power Added Efficiency vs. Input Power by Frequency at 10V and 25% IDSS Input Power (dBm) Figure 10. Drain Current vs. Input Power by Frequency at 10V and 25% IDSS 45 43 41 39 37 20.0 18.0 16.0 14.0 Output Power (dBm) 35 31 29 27 25 23 21 19 17 15 6 8 10 12 14 16 18 20 22 24 26 28 30 2 GHz 3 GHz 4 GHz 5 GHz 6 GHz 7 GHz 8 GHz Gain (dB) 33 12.0 10.0 8.0 6.0 4.0 2.0 0.0 15 17 19 21 23 25 27 29 31 33 35 37 39 41 43 3 GHz 5.5 GHz 8 GHz Input Power (dBm) Figure 11. Output Power vs. Input Power by Frequency at 8V and 25% IDSS Output Power (dBm) Figure 12. Gain vs. Output Power by Frequency at 8V and 25% IDSS 4 M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. M/A-COM makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does M/A-COM assume any liability whatsoever arising out of the use or application of any product(s) or information. * North America Tel: 800.366.2266 / Fax: 978.366.2266 * Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 * Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 Visit www.macom.com for additional data sheets and product information. Amplifier, Power, 8W 2.0-8.0 GHz 30 28 26 24 22 20 2 GHz 3 GHz 4 GHz 5 GHz 6 GHz 7 GHz 8 GHz 5.0 4.5 4.0 3.5 MAAPGM0074-DIE Rev A Preliminary Datasheet All Data is at 30C MMIC base temperature, CW stimulus, unless otherwise noted. PAE (%) 18 16 14 12 10 8 6 4 2 0 6 8 Drain Current (A) 3.0 2.5 2.0 1.5 1.0 0.5 2 GHz 3 GHz 4 GHz 5 GHz 6 GHz 7 GHz 8 GHz 10 12 14 16 18 20 22 24 26 28 30 0.0 6 8 10 12 14 16 18 20 22 24 26 28 30 Input Power (dBm) Figure 13. Power Added Efficiency vs. Input Power by Frequency at 8V and 25% IDSS Input Power (dBm) Figure 14. Drain Current vs. Input Power by Frequency at 8V and 25% IDSS 100 90 80 Harmonic (dBc) 70 60 50 40 30 20 10 0 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0 6 dBm 10 dBm 14 dBm 18 dBm 22 dBm 26 dBm 30 dBm 2 nd Frequency (GHz) Figure 15. Second Harmonic vs. Frequency by Input Power at 10V and 25% IDSS Figure 16. Fixture used to characterize MAAPGM0074-DIE under CW stimulus. 5 M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. M/A-COM makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does M/A-COM assume any liability whatsoever arising out of the use or application of any product(s) or information. * North America Tel: 800.366.2266 / Fax: 978.366.2266 * Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 * Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 Visit www.macom.com for additional data sheets and product information. Amplifier, Power, 8W 2.0-8.0 GHz Mechanical Information Chip Size: 5.000 x 6.346 x 0.075 mm (197 x 250 x 3 mils) MAAPGM0074-DIE Rev A Preliminary Datasheet Chip edge to bond pad dimensions are shown to the center of the bond pad. Figure 17. Die Layout Bond Pad Dimensions Pad RF In and Out DC Drain Supply Voltage VD1 DC Drain Supply Voltage VD2 DC Gate Supply Voltage VG1 DC Gate Supply Voltage VG2 6 M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. M/A-COM makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does M/A-COM assume any liability whatsoever arising out of the use or application of any product(s) or information. Size (m) 100 x 200 200 x 150 500 x 200 150 x 150 150 x 125 Size (mils) 4x8 8x6 20 x 8 6x6 6x5 * North America Tel: 800.366.2266 / Fax: 978.366.2266 * Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 * Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 Visit www.macom.com for additional data sheets and product information. Amplifier, Power, 8W 2.0-8.0 GHz Assembly and Bonding Diagram MAAPGM0074-DIE Rev A Preliminary Datasheet GND Thermal Management is critical on this part. Refer to Application Note AN3019 for applicable guidelines. NOTE 1: All Application Notes may be accessed by going to http://www.macom.com/ Application%20Notes/index.htm. NOTE 2: In implementing the DC/ RF crossover shown, the following rules must applied. 1. 2. 3. 4. the DC crossovers should approach and cross the RF trace at a 90 degree angle; the printed DC traces that approach the RF line should be stopped 2 substrate heights from the RF line edge; the rated current capability of the DC cross-overs should be greater than the maximum current of the device; and the wires or ribbons used to make the DC crossovers should clear the RF trace by ~ 1 substrate height. Figure 18. Recommended operational configuration. Wire bond as shown. Die Handling: Refer to Application Note AN3016. Assembly Instructions: Die Attach: Use AuSn (80/20) 1 mil. preform solder. Limit time @ 310 C to less than 7 minutes. Refer to Application Note AN3017 for more detailed information. Wirebonding: Bond @ 160 C using standard ball or thermal compression wedge bond techniques. For DC pad connections, use either ball or wedge bonds. For best RF performance, use wedge bonds of shortest length, although ball bonds are also acceptable. Biasing Note: Must apply negative bias to VGG before applying positive bias to VDD to prevent damage to amplifier. 7 M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. M/A-COM makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does M/A-COM assume any liability whatsoever arising out of the use or application of any product(s) or information. * North America Tel: 800.366.2266 / Fax: 978.366.2266 * Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 * Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 Visit www.macom.com for additional data sheets and product information. |
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